High-k
Advanced High-k Precursors
Gate and Capacitor Dielectrics
Aluminum Oxide
- TMAL
- trimethylaluminum
Tantalum Oxide
- TBTDET-tBuN=Ta(NEt2)3
- t-butylimido tris
[diethylamino]tantalum
Hafnium Oxide/Silicate
- HfCl4
- hafnium tetrachloride
- Hf(O-t-Bu)4
- hafnium t-butoxide
- TDEAH
- tetrakis[diethylamino]
hafnium
- TDMAH
- tetrakis[dimethylamino]
hafnium
Zirconium Oxide / Silicate
- ZrCl4
- zirconium tetrachloride
- Zr(O-t-Bu)4
- zirconium t-butoxide
- TDEAZ
- tetrakis[diethylamino]
zirconium
- TEMAZ
- tetrakis[ethylmethylamino]
zirconium
- TDMAZ
- tetrakis[dimethylamino]
zirconium
Silicate
- TDMAS
- tetrakis[dimethylamino]
silicon
- TDEAS
- tetrakis[diethylamino]
silicon
- TEMAS
- tetrakis[ethylmethylamino]
silicon
- LTO-410
- diethylsilane
- TRDMAS
- tris[dimethylamino] silane
Photo Courtesy of
Integrated Circuit Engineering
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